1,87 €
4-10 Εργάσιμες
4-10 Εργάσιμες
Type of transistor
|
N-MOSFET |
Technology
|
HEXFET® |
Polarisation
|
unipolar |
Drain-source voltage
|
200V |
Drain current
|
30A |
Power dissipation
|
214W |
Case
|
TO247AC |
Gate-source voltage
|
±20V |
On-state resistance
|
75mΩ |
Mounting
|
THT |
Gate charge
|
123nC |
Kind of package
|
tube |
Kind of channel
|
enhanced |
Κατασκευαστής |
Infineon Technologies |
---|
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